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CBAT54 Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CBAT54 Datasheet(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Continuous Reverse Voltage VR 30 V Continuous Forward Current IF 200 mA Peak Repetitive Forward Current IFRM 300 mA Forward Surge Current, tp=10ms IFSM 600 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MAX UNITS IR VR=25V 2.0 µA VF IF=0.1mA 240 mV VF IF=1.0mA 320 mV VF IF=10mA 400 mV VF IF=30mA 500 mV VF IF=100mA 800 mV Cd VR=1.0V, f=1.0 MHz 10 pF trr IF=IR=10mA, Irr=1.0mA, RL=100Ω 5.0 ns CBAT54 CBAT54A CBAT54C CBAT54S SURFACE MOUNT SILICON SCHOTTKY DIODES SOT-23 CASE Central Semiconductor Corp. TM R0 (13-January 2005) DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAT54 Series types are Silicon Schottky Diodes in an SOT-23 Surface Mount Package. CBAT54: SINGLE MARKING CODE: CL4 CBAT54A: DUAL, COMMON ANODE MARKING CODE: CL42 CBAT54C: DUAL, COMMON CATHODE MARKING CODE: CL43 CBAT54S: DUAL, IN SERIES MARKING CODE: CL44 |
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