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CMLM0605 Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CMLM0605 Datasheet(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page MAXIMUM RATINGS (SOT-563 Package): (TA=25°C) SYMBOL UNITS Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W MAXIMUM RATINGS Q1: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current IC 200 mA MAXIMUM RATINGS D1: (TA=25°C) SYMBOL UNITS Peak Repetitive Reverse Voltage VRRM 40 V Continuous Forward Current IF 500 mA Peak Repetitive Forward Current, tp ≤ 1ms IFRM 3.5 A Forward Surge Current, tp=8ms IFSM 10 A ELECTRICAL CHARACTERISTICS Q1: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICEV VCE=30V, VEB=3.0V - - 50 nA BVCBO IC=10µA 60 96 - V BVCEO IC=1.0mA 40 63 - V BVEBO IE=10µA 6.0 8.0 V VCE(SAT) IC=10mA, IB=1.0mA - 0.050 0.100 V VCE(SAT)IC=50mA, IB=5.0mA - 0.100 0.200 V VBE(SAT)IC=10mA, IB=1.0mA 0.65 0.75 0.85 V VBE(SAT)IC=50mA, IB=5.0mA - 0.85 0.95 V hFE VCE=1.0V, IC=0.1mA 90 130 hFE VCE=1.0V, IC=1.0mA 100 140 hFE VCE=1.0V, IC=10mA 100 150 300 hFE VCE=1.0V, IC=50mA 70 130 hFE VCE=1.0V, IC=100mA 30 90 fT VCE=20V, IC=10mA, f=100MHz 300 MHz Cob VCB=5.0V, IE=0, f=1.0MHz 4.0 pF Cib VBE=0.5V, IC=0, f=1.0MHz 8.0 pF hie VCE=10V, IC=1.0mA, f=1.0kHz 12 k Ω hre VCE=10V, IC=1.0mA, f=1.0kHz 10 X10-4 CMLM0605 MULTI DISCRETE MODULE ™ SURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE SOT-563 CASE Central Semiconductor Corp. TM R1 (22-February 2005) DESCRIPTION: The Central Semiconductor CMLM0605 is a single PNP Transistor and Schottky Diode packaged in a space saving SOT-563 case is designed for small signal general purpose applications where size and operational efficiency are prime requirements. • Complementary Device: CMLM0405 • Combination Low VCE (SAT) Transistor and Low VF Schottky Diode. MARKING CODES: C65 TM |
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