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CMLT6427E Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CMLT6427E Datasheet(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page CMLT6427E ENHANCED SPECIFICATION SURFACE MOUNT SILICON NPN DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT6427E is an Enhanced Specification silicon NPN Darlington transistor. High DC current gains, coupled with a low saturation voltage, make this an excellent choice for industrial/consumer applications where operational efficiency and small size are top priority. MARKING CODE: C64 SOT-563 CASE Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2 FEATURES: • High current (500mA Max) • High DC current gain (15K Min) • Low saturation voltage (VCE(SAT)= 0.8V Max) • High input impedance • SOT-563 surface mount package APPLICATIONS: • Motor drivers • Relay drivers • Pre-amplifier input applications • Voltage regulator controls MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS ♦ Collector-Base Voltage VCBO 60 V ♦ Collector-Emitter Voltage VCES 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 12 V Continuous Collector Current IC 500 mA Power Dissipation (Note 1) PD 350 mW Power Dissipation (Note 2) PD 300 mW Power Dissipation (Note 3) PD 150 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance (Note 1) ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICBO VCB=30V 100 nA ♦ ICEO VCE=25V 100 nA IEBO VEB=10V 100 nA ♦ BVCBO IC=100μA 60 V ♦ BVCES IC=100μA 60 V BVCEO IC=10mA 40 V ♦ Enhanced Specification R3 (29-June 2015) www.centr a lsemi.com |
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