CMPD2836E

CMPD2838E

ENHANCED SPECIFICATION

SURFACE MOUNT

DUAL, SILICON

SWITCHING DIODES

SOT-23 CASE

Central

Semiconductor Corp.

TM

R2 (6-August 2003)

DESCRIPTION:

The Central Semiconductor CMPD2836E and

CMPD2838E are Enhanced versions of the

CMPD2836 and CMPD2838 High Speed

Switching Diodes. These devices are

manufactured by the epitaxial planar process, in

an epoxy molded surface mount SOT-23

package, designed for high speed switching

applications.

FEATURED ENHANCED SPECIFICATIONS:

♦

♦

♦

♦

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MAXIMUM RATINGS (TA=25°C)

SYMBOL

UNITS

Peak Repetitive Reverse Voltage

VRRM

120

V

Average Forward Current

IO

200

mA

Peak Forward Current (tp=1.0 s)

IFM

300

mA

Power Dissipation

PD

350

mW

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

BVR

IR=100µA

120

150

V

IR

VR=80V

100

nA

VF

IF=10mA

0.72

0.85

V

VF

IF=50mA

0.84

0.95

V

VF

IF=100mA

0.92

1.0

V

CT

VR=0, f=1 MHz

1.5

4.0

pF

trr

IR=IF=10mA, RL=100Ω, Rec. to 1.0mA

4.0

ns

The following configurations are available:

CMPD2836E

DUAL, COMMON ANODE

MARKING CODE: CA2E

CMPD2838E

DUAL, COMMON CATHODE

MARKING CODE: CA6E