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1PS76SB17 Datasheet(PDF) 3 Page - NXP Semiconductors |
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1PS76SB17 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 May 25 3 Philips Semiconductors Preliminary specification Schottky barrier diode 1PS76SB17 GRAPHICAL DATA (1) Tamb = 100 °C. (2) Tamb =60 °C. (3) Tamb =25 °C. (4) Tamb = −40 °C. Fig.2 Forward current as a function of forward voltage; typical values. handbook, halfpage 102 10 1 0 MLC795 600 800 400 200 VF (mV) 10−1 10−2 IF (mA) (1) (2) (3) (4) (1) Tamb = 100 °C. (2) Tamb =60 °C. (3) Tamb =25 °C. (4) Tamb = −40 °C. Fig.3 Reverse current as a function of reverse voltage; typical values. handbook, halfpage 10 4 10 3 10 2 10 1 10 1 0 MLC796 2 13 V (V) I R (nA) R (1) (2) (3) (4) f = 1 MHz; Tamb =25 °C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. handbook, halfpage 01 2 3 4 0.4 0.8 MLC797 0.7 0.6 0.5 V (V) R C d (pF) |
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