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2N1711 Datasheet(PDF) 2 Page - NXP Semiconductors |
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2N1711 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1997 May 28 2 Philips Semiconductors Product specification NPN medium power transistor 2N1711 FEATURES • High current (max. 500 mA) • Low voltage (max. 50 V). APPLICATIONS • DC and wideband amplifiers. DESCRIPTION NPN medium power transistor in a TO-39 metal package. PINNING PIN DESCRIPTION 1 emitter 2 base 3 collector, connected to case Fig.1 Simplified outline (TO-39) and symbol. handbook, halfpage 3 1 2 MAM317 1 2 3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 75 V VCEO collector-emitter voltage open base − 50 V ICM peak collector current − 1A Ptot total power dissipation Tamb ≤ 25 °C − 0.8 W hFE DC current gain IC = 150 mA; VCE = 10 V 100 300 fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz 70 − MHz |
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Similar Description - 2N1711 |
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