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2N1711 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # 2N1711
Description  NPN medium power transistor
Download  8 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

2N1711 Datasheet(HTML) 2 Page - NXP Semiconductors

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1997 May 28
2
Philips Semiconductors
Product specification
NPN medium power transistor
2N1711
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 50 V).
APPLICATIONS
• DC and wideband amplifiers.
DESCRIPTION
NPN medium power transistor in a TO-39 metal package.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
collector, connected to case
Fig.1 Simplified outline (TO-39) and symbol.
handbook, halfpage
3
1
2
MAM317
1
2
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
75
V
VCEO
collector-emitter voltage
open base
50
V
ICM
peak collector current
1A
Ptot
total power dissipation
Tamb ≤ 25 °C
0.8
W
hFE
DC current gain
IC = 150 mA; VCE = 10 V
100
300
fT
transition frequency
IC = 50 mA; VCE = 10 V; f = 100 MHz 70
MHz


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