HANBit

HMN4M8D

URL : www.hbe.co.kr

1

HANBit Electronics Co.,Ltd

Rev. 1.0 (May, 2002)

GENERAL DESCRIPTION

The HMN4M8D Nonvolatile SRAM is a 33,554,432-bit static RAM organized as 4,194,304 bytes by 8 bits.

The HMN4M8D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write

cycles of standard SRAM and integral control circuitry which constantly monitors the single 5V supply for an out-of-

tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the

SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is

The HMN4M8D uses extremely low standby current CMOS SRAM’s, coupled with small lithium coin cells to provide non-

volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.

FEATURES

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Access time : 70, 85, 120, 150 ns

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High-density design : 32Mbit Design

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Battery internally isolated until power is applied

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Industry-standard 40-pin 4,096K x 8 pinout

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Unlimited write cycles

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5-years minimum data retention in absence of power

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Automatic write-protection during power-up/power-down

cycles

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Data is automatically protected during power loss

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Industrial temperature operation

OPTIONS

MARKING

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Timing

70 ns

- 70

85 ns

- 85

120 ns

-100

150 ns

-150

Non-Volatile SRAM MODULE 32Mbit (4,096K x 8-Bit), 40Pin-DIP, 5V

Part No. HMN4M8D

PIN ASSIGNMENT

/WE

NC

1

40

13

28

15

26

16

25

11

30

12

29

14

27

2

39

4

37

5

36

7

34

10

31

8

33

6

35

9

32

17

24

/CE

/OE

40-pin Encapsulated Package

18

23

19

22

3

38

20

21

NC

NC

NC

NC