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HSD8M64B8W Datasheet(PDF) 1 Page - Hanbit Electronics Co.,Ltd |
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HSD8M64B8W Datasheet(HTML) 1 Page - Hanbit Electronics Co.,Ltd |
1 / 10 page HANBit HSD8M64B8W URL:www.hbe.co.kr 1 HANBit Electronics Co.,Ltd. REV 1.0 (August.2002) GENERAL DESCRIPTION The HSD8M64B8W is a 8M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of eight CMOS 1M x 16 bit x 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD8M64B8W is a SO-DIMM(Small Outline Dual in line Memory Module) and is intended for mounting into 144-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible. FEATURES • Part Identification HSD8M64B8W-10 : 100MHz (CL=2) HSD8M64B8W-10L : 100MHz (CL=3) HSD8M64B8W-12 : 125MHz (CL=3) HSD8M64B8W-13 : 133MHz (CL=3) • Burst mode operation • Auto & self refresh capability (4096 Cycles/64ms) • LVTTL compatible inputs and outputs • Single 3.3V ±0.3V power supply • MRS cycle with address key programs - Latency (Access from column address) - Burst length (1, 2, 4, 8 & Full page) - Data scramble (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock • The used device is 1M x 16bit x 4Banks SDRAM Synchronous DRAM Module 64Mbyte(8Mx64-Bit), 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V Part No. HSD8M64B8W |
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