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HSD8M64B8W Datasheet(PDF) 1 Page - Hanbit Electronics Co.,Ltd

Part # HSD8M64B8W
Description  Synchronous DRAM Module 64Mbyte(8Mx64-Bit), 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V
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Manufacturer  HANBIT [Hanbit Electronics Co.,Ltd]
Direct Link  http://www.hbe.co.kr
Logo HANBIT - Hanbit Electronics Co.,Ltd

HSD8M64B8W Datasheet(HTML) 1 Page - Hanbit Electronics Co.,Ltd

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HANBit
HSD8M64B8W
URL:www.hbe.co.kr
1
HANBit Electronics Co.,Ltd.
REV 1.0 (August.2002)
GENERAL DESCRIPTION
The HSD8M64B8W is a 8M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of
eight CMOS 1M x 16 bit x 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate.
Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The
HSD8M64B8W is a SO-DIMM(Small Outline Dual in line Memory Module) and is intended for mounting into 144-pin edge
connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are
possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be
useful for a variety of high bandwidth, high performance memory system applications All module components may be
powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.
FEATURES
Part Identification
HSD8M64B8W-10 : 100MHz (CL=2)
HSD8M64B8W-10L : 100MHz (CL=3)
HSD8M64B8W-12 : 125MHz (CL=3)
HSD8M64B8W-13 : 133MHz (CL=3)
• Burst mode operation
• Auto & self refresh capability (4096 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V
±0.3V power supply
• MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• The used device is 1M x 16bit x 4Banks SDRAM
Synchronous DRAM Module 64Mbyte(8Mx64-Bit), 144pin SO-DIMM,
4Banks, 4K Ref., 3.3V
Part No. HSD8M64B8W


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