HSD8M64F8VA-12 datasheet(5/10 Pages) HANBIT

Part #	HSD8M64F8VA-12

Description	Synchronous DRAM Module 64Mbyte ( 8M x 64-Bit ) SMM based on 8Mx8, 4Banks, 4K Ref., 3.3V

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Manufacturer	HANBIT [Hanbit Electronics Co.,Ltd]

Direct Link	http://www.hbe.co.kr

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HANBit

HSD8M64F8V/VA

URL:www.hbe.co.kr

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HANBit Electronics Co.,Ltd.

REV.1.0(August.2002)

ICC2N

CKE

≥ V

IH(min)

CS*

≥ V

IH(min),

tCC=10ns

Input signals are changed

one time during 20ns

120

Precharge standby current in

non power-down mode

ICC2NS

CKE

≥ V

IH(min)

CLK

≤ V

IL(max),

tCC=∞

Input signals are stable

48

mA

ICC3P

CKE

≤ V

IL(max), tCC=10ns

24

Active

standby

current

in

power-down mode

ICC3PS

CKE&CLK

≤ V

IL(max)

tCC=∞

24

mA

ICC3N

CKE

≥V

IH(min),

CS*

≥V

IH(min),

tCC=10ns

Input signals are changed

one time during 20ns

200

Active standby current in

non power-down mode

(One bank active)

ICC3NS

CKE

≥VIH(min)

CLK

≤VIL(max), t

CC=∞

Input signals are stable

120

mA

Operating current

(Burst mode)

ICC4

IO = 0 mA

Page burst

4Banks Activated

tCCD = 2CLKs

920

880

760

mA

1

Refresh current

ICC5

tRC ≥ tRC(min)

1080

1040

1000

mA

2

G

8

mA

Self refresh current

ICC6

CKE

≤ 0.2V

F

3200

mA

Notes :

1. Measured with outputs open.

2. Refresh period is 64ms.

3. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ).

AC OPERATING TEST CONDITIONS

(vcc = 3.3V

± 0.3V, TA = 0 to 70° C)

PARAMETER

Value

UNIT

AC Input levels (Vih/Vil)

2.4/0.4

V

Input timing measurement reference level

1.4

V

Input rise and fall time

tr/tf = 1/1

Ns

Output timing measurement reference level

1.4

V

Output load condition

See Fig. 2

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