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2PA733P Datasheet(PDF) 3 Page - NXP Semiconductors |
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2PA733P Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 May 28 3 Philips Semiconductors Product specification PNP general purpose transistor 2PA733 THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj =25 °C unless other specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 250 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −60 V −−−100 nA IEBO emitter cut-off current IC = 0; VEB = −5V −−−100 nA hFE DC current gain IC = −1 mA; VCE = −6V 2PA733P 200 − 400 VCEsat collector-emitter saturation voltage IC = −100 mA; IB = −10 mA −−−300 mV VBE base-emitter voltage IC = −1 mA; VCE = −6V −600 −−700 mV Cc collector capacitance IE =ie = 0; VCB = −10 V; f = 1 MHz − 4.5 6 pF Ce emitter capacitance IC =ic = 0; VEB = −0.5 V; f = 1 MHz − 10 − pF fT transition frequency IC = −10 mA; VCE = −6 V; f = 100 MHz 100 180 − MHz F noise figure IC = −200 µA; VCE = −5 V; RS =2kΩ; f = 1 kHz; B = 100 Hz −− 10 dB |
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