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P800D Datasheet(PDF) 1 Page - EIC discrete Semiconductors

Part # P800D
Description  SILICON RECTIFIER DIODES
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Manufacturer  EIC [EIC discrete Semiconductors]
Direct Link  http://www.eicsemi.com
Logo EIC - EIC discrete Semiconductors

P800D Datasheet(HTML) 1 Page - EIC discrete Semiconductors

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P800A - P800K
SILICON RECTIFIER DIODES
PRV : 50 - 800 Volts
Io : 8.0 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
MECHANICAL DATA :
* Case : Void-free molded plastic body
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight :
2.1 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°C ambient temperature unless otherwise specified.
SYMBOL
P800A
P800B
P800D
P800G
P800J
P800K
UNIT
Maximum Repetitive Peak Reverse VoltageVRRM
50
100
200
400
600
800V
Maximum RMS VoltageVRMS
35
70
140
280
420
560V
Maximum DC Blocking VoltageVDC
50
100
200
400
600
800V
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 50
°C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed on
rated load (JEDEC Method)
Maximum Instantaneous Forward Voltage at I F = 8 AVF
1.0V
Maximum DC Reverse Current
Ta = 25
°C
IR
5.0
µA
at rated DC Blocking Voltage
Ta = 100
°C
IR(H)
1.0
mA
Typical junction capacitance at 4.0V, 1MHzC J
150
pF
Typical Thermal Resistance (1)
R
θJA
20
°C/W
Junction Temperature RangeTJ
- 50 to + 150
°C
Storage Temperature RangeTSTG
- 50 to + 150
°C
Note :
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length,
P.C.B. mounted with 1.1” x 1.1” (30 x 30mm) copper pads
Page 1 of 2
Rev. 02 : March 25, 2005
A
400
IFSM
RATING
IF(AV)
8.0A
0.360 (9.1)
0.340 (8.6)
D6
0.360 (9.1)
0.340 (8.6)
0.052 (1.32)
0.048 (1.22)
Dimensions in inches and ( millimeters )
1.00 (25.4)
MIN.
1.00 (25.4)
MIN.
* Pb / RoHS Free


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