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P800D Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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P800D Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
1 / 2 page P800A - P800K SILICON RECTIFIER DIODES PRV : 50 - 800 Volts Io : 8.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop MECHANICAL DATA : * Case : Void-free molded plastic body * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 2.1 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. SYMBOL P800A P800B P800D P800G P800J P800K UNIT Maximum Repetitive Peak Reverse VoltageVRRM 50 100 200 400 600 800V Maximum RMS VoltageVRMS 35 70 140 280 420 560V Maximum DC Blocking VoltageVDC 50 100 200 400 600 800V Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 50 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Instantaneous Forward Voltage at I F = 8 AVF 1.0V Maximum DC Reverse Current Ta = 25 °C IR 5.0 µA at rated DC Blocking Voltage Ta = 100 °C IR(H) 1.0 mA Typical junction capacitance at 4.0V, 1MHzC J 150 pF Typical Thermal Resistance (1) R θJA 20 °C/W Junction Temperature RangeTJ - 50 to + 150 °C Storage Temperature RangeTSTG - 50 to + 150 °C Note : (1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length, P.C.B. mounted with 1.1” x 1.1” (30 x 30mm) copper pads Page 1 of 2 Rev. 02 : March 25, 2005 A 400 IFSM RATING IF(AV) 8.0A 0.360 (9.1) 0.340 (8.6) D6 0.360 (9.1) 0.340 (8.6) 0.052 (1.32) 0.048 (1.22) Dimensions in inches and ( millimeters ) 1.00 (25.4) MIN. 1.00 (25.4) MIN. * Pb / RoHS Free |
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