SI426DQ datasheet(2/4 Pages) VISHAY

Part #	SI426DQ

Description	N-Channel 2.5-V (G-S) Rated MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si6426DQ

2

Siliconix

S-49534—Rev. A, 06-Oct-97

Specifications (TJ = 25

_C Unless Otherwise Noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

0.6

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V, TJ = 55_C

5

mA

On State Drain Currenta

ID( )

VDS w 5 V, VGS = 4.5 V

"20

A

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 2.5 V

"8

A

Drain Source On State Resistancea

r

VGS = 4.5 V, ID = 5.4 A

0.025

0.035

W

Drain-Source On-State Resistancea

rDS(on)

VGS = 2.5 V, ID = 4.9 A

0.030

0.04

W

Forward Transconductancea

gfs

VDS = 10 V, ID = 5.4 A

22

S

Diode Forward Voltagea

VSD

IS = 1.25 A, VGS = 0 V

0.7

1.2

V

Dynamicb

Total Gate Charge

Qg

18

35

Gate-Source Charge

Qgs

VDS = 6 V, VGS = 4.5 V, ID = 5.4 A

2.5

nC

Gate-Drain Charge

Qgd

4

Turn-On Delay Time

td(on)

35

60

Rise Time

tr

VDD = 6 V, RL = 6 W

65

100

Turn-Off Delay Time

td(off)

ID ^ 1 A, VGEN = 4.5 V, RG = 6 W

100

150

ns

Fall Time

tf

33

60

Source-Drain Reverse Recovery Time

trr

IF = 1.25 A, di/dt = 100 A/ms

50

100

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

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