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K6R4016V1C-I10 Datasheet(PDF) 3 Page - Samsung semiconductor

Part # K6R4016V1C-I10
Description  256Kx16 Bit High Speed Static RAM(3.3V Operating)
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

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K6R4016V1C-C/C-L, K6R4016V1C-I/C-P
CMOS SRAM
PRELIMPreliminaryPPPPPPPPPINARY
Rev 5.0
- 3 -
September 2001
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A0
A1
A2
A3
A4
CS
I/O1
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A5
A6
A7
A8
A9
PIN CONFIGURATION (Top View)
SOJ/
A17
A16
A15
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A14
A13
A12
A11
A10
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
TSOP2
LB
OE
A0
A1
A2
N.C
I/O1
UB
A3
A4
CS
I/O9
I/O2
I/O3
A5
A6
I/O11
I/O10
Vss
I/O4
A17
A7
I/O12
Vcc
Vcc
I/O5
N.C
A16
I/O13
Vss
I/O7
I/O6
A14
A15
I/O14
I/O15
I/O8
N.C
A12
A13
WE
I/O16
N.C
A8
A9
A10
A11
N.C
1
2
3
4
5
6
A
B
C
D
E
F
G
H
48-CSP
ABSOLUTE MAXIMUM RATINGS*
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on Any Pin Relative to VSS
VIN, VOUT
-0.5 to 4.6
V
Voltage on VCC Supply Relative to VSS
VCC
-0.5 to 4.6
V
Power Dissipation
PD
1.0
W
Storage Temperature
TSTG
-65 to 150
°C
Operating Temperature
Commercial
TA
0 to 70
°C
Industrial
TA
-40 to 85
°C
PIN FUNCTION
Pin Name
Pin Function
A0 - A17
Address Inputs
WE
Write Enable
CS
Chip Select
OE
Output Enable
LB
Lower-byte Control(I/O1~I/O8)
UB
Upper-byte Control(I/O9~I/O16)
I/O1 ~ I/O16
Data Inputs/Outputs
VCC
Power(+3.3V)
VSS
Ground
N.C
No Connection


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