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HSD32M64F8R-13 Datasheet(PDF) 6 Page - Hanbit Electronics Co.,Ltd

Part # HSD32M64F8R-13
Description  Synchronous DRAM Module 256Mbyte (32Mx64bit), SMM ,16Mx16, 4Banks, 8K Ref. 3.3V
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Manufacturer  HANBIT [Hanbit Electronics Co.,Ltd]
Direct Link  http://www.hbe.co.kr
Logo HANBIT - Hanbit Electronics Co.,Ltd

HSD32M64F8R-13 Datasheet(HTML) 6 Page - Hanbit Electronics Co.,Ltd

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HANBit
HSD32M64F8R
URL:www.hbe.co.kr
- 6 -
HANBit Electronics Co.,Ltd
REV.1.0(August.2002).
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
VERSION
PARAMETER
SYMBOL
TEST
CONDITION
-13
-10L
-10
UNIT
NOT
E
Operating current
(One bank active)
ICC1
Burst length = 1
tRC ≥ tRC(min)
IO = 0mA
960
880
880
mA
1
ICC2P
CKE
≤ V
IL(max)
tCC=10ns
8
mA
3
Precharge standby
current in power-down
mode
ICC2PS
CKE & CLK
≤ V
IL(max)
tCC=∞
8
mA
3
ICC2N
CKE
≥ V
IH(min)
/CE
≥ V
IH(min),
tcc=10ns
Input signals are changed one
time during 20ns
160
Precharge standby
current in non power-
down mode
ICC2NS
CKE
≥ V
IH(min)
CLK
≤ V
IL(max),
tcc=
∞
Input signals are stable
56
mA
3
ICC3P
CKE
≤ V
IL(max), tcc=10ns
40
Active standby current in
power-down mode
ICC3PS
CKE&CLK
≤ V
IL(max)
tcc=
∞
40
mA
3
ICC3N
CKE
≥V
IH(min),
/CE
≥V
IH(min),
tcc=10ns
Input signals are changed one
time during 20ns
240
Active standby current in
non power-down mode
(One bank active)
ICC3NS
CKE
≥VIH(min)
CLK
≤VIL(max), tcc=∞
Input signals are stable
160
mA
3
Operating current
(Burst mode)
ICC4
IO = 0 mA
Page burst
4Banks Activated
tCCD = 2CLKs
1.2
1
1
A
1
Refresh current
ICC5
tRC ≥ tRC(min)
1.76
1.68
1.68
A
2
Self refresh current
ICC6
CKE
≤ 0.2V
12
mA
3
Notes:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Measured with 1PLL & 3 Drive Ics.
4. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ).


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