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GS8160V36AT-150 Datasheet(PDF) 11 Page - GSI Technology |
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GS8160V36AT-150 Datasheet(HTML) 11 Page - GSI Technology |
11 / 24 page Rev: 1.00a 6/2003 11/24 © 2003, Giga Semiconductor, Inc. Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS8160V18/32/36AT-350/333/300/250/200/150 Preliminary First Write First Read Burst Write Burst Read Deselect R W CR CW X X WR R W R X X X CR R CW CR CR W CW W CW Simplified State Diagram with G Notes: 1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G. 2. Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from Read cycles to Write cycles without passing through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles. 3. Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet Data Input Set Up Time. |
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