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GS8182S18D-250 Datasheet(PDF) 9 Page - GSI Technology |
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GS8182S18D-250 Datasheet(HTML) 9 Page - GSI Technology |
9 / 31 page Separate I/O Burst of 2 SigmaSIO-II SRAM Truth Table A LD R/W Current Operation D D Q Q K ↑ (tn) K ↑ (tn) K ↑ (tn) K ↑ (tn) K ↑ (tn+1) K ↑ (tn+1) K ↑ (tn+1) K ↑ (tn+1) X 1 X Deselect X — Hi-Z — V 0 1 Read X — Q0 Q1 V 0 0 Write D0 D1 Hi-Z — Notes: 1. “1” = input “high”; “0” = input “low”; “V” = input “valid”; “X” = input “don’t care” 2. “—” indicates that the input requirement or output state is determined by the next operation. 3. Q0 and Q1 indicate the first and second pieces of output data transferred during Read operations. 4. D0 and D1 indicate the first and second pieces of input data transferred during Write operations. 5. Qs are tristated for one cycle in response to Deselect and Write commands, one cycle after the command is sampled, except when pre- ceded by a Read command. 6. CQ is never tristated. 7. Users should not clock in metastable addresses. GS8182S18D-267/250/200/167 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Rev: 1.08a 8/2005 9/31 © 2003, GSI Technology |
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