WSA753 datasheet(2/2 Pages) ETC1

Part #	WSA753

Description	PNP EPITAXIAL SILICON TRANSISTOR

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WSA753

JAN. 2003 REV:00

Base Emitter Saturation Voltage

Collector Emitter Saturation Voltage

、

IC,Collector Current,mA

-1

-10

-100

-1000

-10

-100

-1000

IC=10IB

VBE(sat)

VCE(sat)

Safe Operating Area

-10

-1

-3

-10

-30

-100 -300

-1000

-0.01

-0.1

-0.3

-1

-3

VCE(V),Collector Emitter Voltage

Power Derating

4

14

16

12

8

50

100

150

200

250

Tc(℃), Case Temperature

Ic Max(Pulse)

Ic Max(DC)

1mS

10mS

Static Characteristics

0

0.4

0.8

1.6

1.2

2.0

2.2

IB=-6mA

IB=-4mA

IB=-3mA

IB=-2mA

IB=-1mA

Vce,Collector-Emitter Voltage ,V

-4

-8

-12

-16

DC Current Gain

1000

-1

-10

-100

-1000

-10000

10

30

100

300

IC,Collector Current,mA

VCE=-2V

IB=-8mA

IB=-10mA

Current Gain-Bandwidth Product

-

30

100

1000

50

-0.1

-1

-0.01

10

1

IC,Collector Current,A

300

VCE=-5V

100uS

2

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