BFR183F datasheet(3/6 Pages) INFINEON

Part #	BFR183F

Description	NPN Silicon RF Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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3 / 6 page

2005-10-14

3

BFR183F

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

AC Characteristics (verified by random sampling)

Transition frequency

IC = 25 mA, VCE = 8 V, f = 500 MHz

fT

6

8

-

GHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz, VBE = 0 ,

emitter grounded

Ccb

-

0.34

0.54

pF

Collector emitter capacitance

VCE = 10 V, f = 1 MHz, VBE = 0, base grounded

Cce

-

0.2

-

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz, VCB = 0 ,

collector grounded

Ceb

-

1.1

-

Noise figure

IC = 5 mA, VCE = 8 V, ZS = ZSopt,

f = 900 MHz

f = 1.8 GHz

F

-

0.9

1.4

-

dB

Power gain, maximum stableIC = 15 mA

IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,

f = 900 MHz

Gms

-

21

-

dB

Power gain, maximum available1)

IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,

f = 1.8 GHz

Gma

-

14.5

-

dB

Transducer gain

IC = 15 mA, VCE = 8 V, ZS = ZL = 50 Ω,

f = 900 MHz

f = 1.8 MHz

|S21e|2

-

17

11

-

dB

Third order intercept point at output2)

VCE = 8 V, IC = 15 mA, f = 900MHz, ZS=ZL=50 Ω

IP3

-

26

-

dBm

1dB Compression point3)

IC = 15 mA, VCE = 8 V, f = 900MHz, ZS=ZL=50 Ω

P-1dB

-

10.5

-

1G

ma = |S21e / S12e| (k-(k²-1)

1/2), Gms = |S21 / S12|

2IP3 value depends on termination of all intermodulation frequency components.

Termination used for this measurement is 50

Ω from 0.1 MHz to 6 GHz

3DC current at no input power

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