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BSC029N025S Datasheet(PDF) 3 Page - Infineon Technologies AG |
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BSC029N025S Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 10 page BSC029N025S G Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 3830 5090 pF Output capacitance C oss - 1460 1940 Reverse transfer capacitance Crss - 170 255 Turn-on delay time t d(on) - 7.5 11 ns Rise time t r -8 11 Turn-off delay time t d(off) -33 49 Fall time t f -6 9 Gate Charge Characteristics 4) Gate to source charge Q gs -11 15 nC Gate charge at threshold Q g(th) -6 8 Gate to drain charge Q gd -8 12 Switching charge Q sw -13 19 Gate charge total Q g -31 41 Gate plateau voltage V plateau - 2.9 - V Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 5 V -27 36 nC Output charge Q oss V DD=15 V, V GS=0 V -32 42 Reverse Diode Diode continous forward current I S - - 50 A Diode pulse current I S,pulse - - 200 Diode forward voltage V SD V GS=0 V, I F=50 A, T j=25 °C - 0.84 1 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/µs - - 15 nC 4) See figure 16 for gate charge parameter definition T C=25 °C Values V GS=0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D=25 A, R G=2.7 Ω V DD=15 V, I D=25 A, V GS=0 to 5 V Rev. 0.94 page 3 2006-05-10 |
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