BSC048N025SG datasheet(3/10 Pages) INFINEON

Part #	BSC048N025SG

Description	OptiMOS짰2 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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BSC048N025S G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

-

2010

2670

pF

Output capacitance

C oss

-

769

1020

Reverse transfer capacitance

Crss

-

95

142

Turn-on delay time

t d(on)

-

5.7

8

ns

Rise time

t r

-5

8

Turn-off delay time

t d(off)

-22

33

Fall time

t f

-4

6

Gate Charge Characteristics

4)

Gate to source charge

Q gs

-6

9

nC

Gate charge at threshold

Q g(th)

-3

4

Gate to drain charge

Q gd

-4

7

Switching charge

Q sw

-8

11

Gate charge total

Q g

-16

21

Gate plateau voltage

V plateau

-

3.2

-

V

Gate charge total, sync. FET

Q g(sync)

V DS=0.1 V,

V GS=0 to 5 V

-14

19

nC

Output charge

Q oss

V DD=15 V, V GS=0 V

-17

22

Reverse Diode

Diode continous forward current

I S

-

50

A

Diode pulse current

I S,pulse

-

200

Diode forward voltage

V SD

V GS=0 V, I F=50 A,

T j=25 °C

-

0.87

1.1

V

Reverse recovery charge

Q rr

V R=15 V, I F=I S,

di F/dt =400 A/µs

-

10

nC

4) See figure 16 for gate charge parameter definition

T C=25 °C

Values

V GS=0 V, V DS=15 V,

f =1 MHz

V DD=15 V, V GS=10 V,

I D=25 A, R G=2.7 Ω

V DD=15 V, I D=25 A,

V GS=0 to 5 V

Rev. 0.94

page 3

2006-05-10

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