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IKA15N60T Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IKA15N60T Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 13 page IKA15N60T TrenchStop Series q Power Semiconductors 3 Rev. 2.1 July 06 ® Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. Typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 17 - Rise time tr - 11 - Turn-off delay time td(off) - 188 - Fall time tf - 50 - ns Turn-on energy Eon - 0.22 - Turn-off energy Eoff - 0.35 - Total switching energy Ets Tj=25°C, VCC=400V,IC=15A, VGE=0 /15V, RG=15Ω, Lσ 1) =154nH, Cσ 1) =39pF Energy losses include “tail” and diode reverse recovery. - 0.57 - mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr - 34 - ns Diode reverse recovery charge Qrr - 0.24 - µC Diode peak reverse recovery current Irrm - 10.4 - A Diode peak rate of fall of reverse recovery current during tb dirr/dt Tj=25°C, VR=400V, IF=15A, diF/dt=825A/µs - 718 - A/ µs Switching Characteristic, Inductive Load, at Tj=175 °C Value Parameter Symbol Conditions min. Typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 17 - Rise time tr - 15 - Turn-off delay time td(off) - 212 - Fall time tf - 79 - ns Turn-on energy Eon - 0.34 - Turn-off energy Eoff - 0.47 - Total switching energy Ets Tj=175°C, VCC=400V,IC=15A, VGE=0/15V, RG= 15 Ω Lσ 1) =154nH, Cσ 1) =39pF Energy losses include “tail” and diode reverse recovery. - 0.81 - mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr - 140 - ns Diode reverse recovery charge Qrr - 1.0 - µC Diode peak reverse recovery current Irrm - 14.7 - A Diode peak rate of fall of reverse recovery current during tb dirr/dt Tj=175°C VR=400V, IF=15A, diF/dt=825A/µs - 495 - A/ µs 1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E. |
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