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SP0000-88716 Datasheet(PDF) 7 Page - Infineon Technologies AG |
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SP0000-88716 Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 8 page IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 13 Typ. avalanche energy 15 Drain-source breakdown voltage E AS=f(T j ) V BR(DSS)=f(T j); I D=1 mA parameter: I D 14 Typ. gate charge 16 Gate charge waveforms V GS=f(Q gate); I D=77 A pulsed parameter: V DD 20 A 30 A 38 A 0 50 100 150 200 250 300 350 0 50 100 150 200 T j [°C] V GS Q gate Q gs Q gd Q g V GS Q gate Q gs Q gd Q g 46 48 50 52 54 56 58 60 62 64 66 -60 -20 20 60 100 140 180 T j [°C] 11 V 44 V 0 2 4 6 8 10 12 0 20 40 60 80 100 120 Q gate [nC] Rev. 0.9 page 7 2005-09-16 |
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