SIDC53D120H6 datasheet(2/4 Pages) INFINEON

Part #	SIDC53D120H6

Description	Fast switching diode chip in EMCON-Technology

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Manufacturer	INFINEON [Infineon Technologies AG]

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Preliminary

SIDC53D120H6

Edited by INFINEON Technologies AI PS DD HV3, L 4392S, Edition 1, 8.01.2002

Maximum Ratings

Parameter

Symbol

Condition

Value

Unit

Repetitive peak reverse voltage

V RRM

1200

V

Continuous forward current limited by

Tjmax

I F

100

Single pulse forward current

(depending on wire bond configuration)

I FSM

tP = 10 ms sinusoidal

tbd

Maximum repetitive forward current

limited by Tjmax

I FRM

200

A

Operating junction and storage

temperature

Tj , Tstg

-55...+150

°C

Static Electrical Characteristics (tested on chip), Tj=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

min.

Typ.

max.

Unit

Reverse leakage current

I R

V R=1200V

Tj=25 ° C

27

µA

Cathode-Anode

breakdown Voltage

V Br

I R=4mA

Tj=25°C

1200

V

Forward voltage drop

V F

I F=100A

Tj=25 ° C

1.6

V

Dynamic Electrical Characteristics, at Tj = 25 °C, unless otherwise specified, tested at component

Value

Parameter

Symbol

Conditions

min.

Typ.

max.

Unit

t rr1

IF=100A

Tj =25°C

tbd

Reverse recovery time

t rr2

di/dt=1100A/

µs

VR=600V

Tj =125°C

ns

I RRM1

Tj =25°C

119.8

Peak recovery current

I RRM2

IF=100A

di/dt=1100A/

µs

VR= 600V

Tj =125°C

127.5

A

Qrr1

Tj=25 ° C

10

Reverse recovery charge

Qrr2

IF=100A

di/dt=1100A/

µs

VR= 600V

Tj=125 ° C

18

µC

dirr1/dt

Tj= 25 ° C

tbd

Peak rate of fall of reverse

recovery current

dirr2/dt

IF=100A

di/dt=1100A/

µs

VR= 600V

Tj=125 ° C

A/

µs

S1

Tj=25 ° C

tbd

Softness

S2

IF=100A

di/dt=1100A/

µs

VR= 600V

Tj=125 ° C

1

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