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SIGC20T120 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SIGC20T120 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 4 page SIGC20T120 Edited by INFINEON Technologies AI PS DD HV3, L7631A, Edition 2, 04.09.2003 IGBT 3 Chip This chip is used for: • power module FEATURES: • 1200V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Applications: • drives G C E Chip Type VCE ICn Die Size Package Ordering Code SIGC20T120 1200V 15A 4.41 x 4.47 mm 2 sawn on foil Q67050- A4103-A001 MECHANICAL PARAMETER: Raster size 4.41 x 4.47 Emitter pad size 2.995 x 2.901 Gate pad size 1.107 x 0.702 mm Area total / active 19.7 / 12.8 mm 2 Thickness 140 µm Wafer size 150 mm Flat position 0 grd Max.possible chips per wafer 748 pcs Passivation frontside Photoimide Emitter metallization 3200 nm AlSiCu Collector metallization 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding Die bond electrically conductive glue or solder Wire bond Al, <500µm Reject Ink Dot Size ∅ 0.65mm ; max 1.2mm Recommended Storage Environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C |
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