Q67050-A4339-A101 datasheet(2/4 Pages) INFINEON

Part #	Q67050-A4339-A101

Description	IGBT3 Chip

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Manufacturer	INFINEON [Infineon Technologies AG]

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SIGC39T60

Edited by INFINEON Technologies AI PS DD CLS, L7571A, Edition 2, 27.01.2005

MAXIMUM RATINGS:

Parameter

Symbol

Value

Unit

Collector-emitter voltage, Tj= 25 °C

V CE

600

V

DC collector current, limited by Tjmax

I C

1 )

A

Pulsed collector current, tp limited by Tjmax

I cpuls

225

A

Gate emitter voltage

V GE

±20

V

Operating junction and storage temperature

Tj, Tstg

-40 ... +175

°C

Tvj = 150°C

6

SC data, VGE = 15V, VCC = 360V

Tvj = 25°C

tp

8

µs

1 ) depending on thermal properties of assembly

STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

Collector-emitter breakdown voltage

V(BR)CES

VGE=0V , IC= 4mA

600

Collector-emitter saturation voltage

VCE(sat)

VGE=15V, IC=75A

1.05

1.45

1.85

Gate-emitter threshold voltage

VGE(th)

IC=1200µA , VGE=VCE

5.0

5.8

6.5

V

Zero gate voltage collector current

ICES

VCE=600V , VGE=0V

3.8

µA

Gate-emitter leakage current

IGES

VCE=0V , VGE=20V

600

nA

Integrated gate resistor

RGint

none

Ω

ELECTRICAL CHARACTERISTICS (verified by design/characterization):

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

Input capacitance

Ciss

4620

Output capacitance

Coss

288

Reverse transfer capacitance

Crss

V CE=25V,

V GE=0V,

f =1MHz

137

pF

SWITCHING CHARACTERISTICS (verified by design/characterization), inductive load

Value

2)

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

Turn-on delay time

t d(on)

25

Rise time

t r

18

Turn-off delay time

t d(off)

210

Fall time

t f

Tj=125 ° C

V CC =300V,

I C =75A,

V GE= - 15/15V,

RG= 5.1Ω

60

ns

2) values also influenced by parasitic L- and C- in measurement and package.

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