SIGC81T120R2CS

Edited by INFINEON Technologies AI PS DD HV3, L 7161-T, Edition 2, 03.09.2003

IGBT Chip in NPT-technology

This chip is used for:

•

IGBT Modules

FEATURES:

•

1200V NPT technology 175µm chip

•

low turn-off losses

•

short tail current

•

positive temperature coefficient

•

easy paralleling

•

integrated gate resistor

Applications:

•

drives, SMPS, resonant

applications

G

C

E

Chip Type

Die Size

Package

Ordering Code

SIGC81T120R2CS

1200V

50A

9.08 X 8.98 mm

2

sawn on foil

Q67050-

A4050-A001

MECHANICAL PARAMETER:

Raster size

9.08 X 8.98

Emitter pad size

8 x (2.6 x 1.78)

Gate pad size

1.46 x 0.8

Area total / active

81.5 / 63.5

mm

2

Thickness

180

µm

Wafer size

150

mm

Flat position

90

grd

Max.possible chips per wafer

167 pcs

Passivation frontside

Photoimide

Emitter metallization

3200 nm Al Si 1%

Collector metallization

1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

Die bond

electrically conductive glue or solder

Wire bond

Al, <500µm

Reject Ink Dot Size

∅ 0.65mm ; max 1.2mm

Recommended Storage Environment

store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C