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Q67050-A4107-A001 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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Q67050-A4107-A001 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 4 page SIGC84T120R3 Edited by INFINEON Technologies AI PS DD HV3, L7671A, Edition 2, 04.09.2003 IGBT 3 Chip This chip is used for: • power module FEATURES: • 1200V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Applications: • drives G C E Chip Type VCE ICn Die Size Package Ordering Code SIGC84T120R3 1200V 75A 9.13 x 9.15 mm 2 sawn on foil Q67050- A4107-A001 MECHANICAL PARAMETER: Raster size 9.13 x 9.15 Emitter pad size 8x(1.864 x 3.736) Gate pad size 1.139 x 1.139 mm Area total / active 83.5 / 63.6 mm 2 Thickness 140 µm Wafer size 150 mm Flat position 90 grd Max.possible chips per wafer 164 pcs Passivation frontside Photoimide Emitter metallization 3200 nm AlSiCu Collector metallization 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding Die bond electrically conductive glue or solder Wire bond Al, <500µm Reject Ink Dot Size ∅ 0.65mm ; max 1.2mm Recommended Storage Environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C |
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