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Q67050-A4085-A003 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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Q67050-A4085-A003 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 4 page SIGC156T120R2CS Edited by INFINEON Technologies AI PS DD HV3, L 7181-T, Edition 2, 03.09.2003 IGBT Chip in NPT-technology This chip is used for: • IGBT Modules FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Applications: • drives, SMPS, resonant applications G C E Chip Type VCE ICn Die Size Package Ordering Code SIGC156T120R2CS 1200V 100A 12.59 X 12.59 mm 2 sawn on foil Q67050- A4085-A003 MECHANICAL PARAMETER: Raster size 12.59 X 12.59 Emitter pad size 8 x (3.98 x 2.38) Gate pad size 1.46 x 0.8 Area total / active 158.5 / 132.6 mm 2 Thickness 180 µm Wafer size 150 mm Flat position 90 grd Max.possible chips per wafer 82 pcs Passivation frontside Photoimide Emitter metallization 3200 nm Al Si 1% Collector metallization 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding Die bond electrically conductive glue or solder Wire bond Al, <500µm Reject Ink Dot Size ∅ 0.65mm ; max 1.2mm Recommended Storage Environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C |
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