SIGC158T120R3

Edited by INFINEON Technologies AI PS DD HV3, L7691A, Edition 2, 04.09.2003

IGBT

3

Chip

This chip is used for:

•

power module

FEATURES:

•

1200V Trench + Field Stop technology

•

low turn-off losses

•

short tail current

•

positive temperature coefficient

•

easy paralleling

Applications:

•

drives

G

C

E

Chip Type

Die Size

Package

Ordering Code

SIGC158T120R3

1200V 150A

12.56 x 12.56 mm

2

sawn on foil

Q67050-

A4109-A001

MECHANICAL PARAMETER:

Raster size

12.56 x 12.56

Emitter pad size

8x(2.646 x 5.454)

Gate pad size

1.139 x 1.139

mm

Area total / active

157.8 / 128.1

mm

2

Thickness

140

µm

Wafer size

150

mm

Flat position

90

grd

Max.possible chips per wafer

86 pcs

Passivation frontside

Photoimide

Emitter metallization

3200 nm AlSiCu

Collector metallization

1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

Die bond

electrically conductive glue or solder

Wire bond

Al, <500µm

Reject Ink Dot Size

∅ 0.65mm ; max 1.2mm

Recommended Storage Environment

store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C