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Q67050-A4286-A101 Datasheet(PDF) 2 Page - Infineon Technologies AG

Part # Q67050-A4286-A101
Description  IGBT Chip in NPT-technology
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

Q67050-A4286-A101 Datasheet(HTML) 2 Page - Infineon Technologies AG

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SIGC223T120R2CL
Edited by INFINEON Technologies AI PS DD HV3, L 7121-P, Edition 2, 03.09.2003
MAXIMUM RATINGS:
Parameter
Symbol
Value
Unit
Collector-emitter voltage, Tj=25 °C
V CE
1200
V
DC collector current, limited by Tjmax
I C
1 )
A
Pulsed collector current, tp limited by Tjmax
I cpuls
450
A
Gate emitter voltage
V GE
±20
V
Operating junction and storage temperature
Tj, Tstg
-55 ... +150
°C
1 ) depending on thermal properties of assembly
STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified:
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
Collector-emitter breakdown voltage
V(BR)CES
VGE=0V , IC=8 mA
1200
Collector-emitter saturation voltage
VCE(sat)
VGE=15V, IC=150A
1.8
2.2
2.6
Gate-emitter threshold voltage
VGE(th)
IC=6mA , VGE=VCE
4.5
5.5
6.5
V
Zero gate voltage collector current
ICES
VCE=1200V , VGE=0V
18.2
µA
Gate-emitter leakage current
IGES
VCE=0V , VGE=20V
600
nA
DYNAMIC CHARACTERISTICS (tested at component):
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
Input capacitance
Ciss
-
11
-
Output capacitance
Coss
-
-
-
Reverse transfer capacitance
Crss
V CE=25V,
V GE=0V,
f =1MHz
-
0.7
-
nF
SWITCHING CHARACTERISTICS (tested at component), Inductive Load:
Value
Parameter
Symbol
Conditions
1)
min.
typ.
max.
Unit
Turn-on delay time
t d(on)
-
50
-
Rise time
t r
-
50
-
Turn-off delay time
t d(off)
-
570
-
Fall time
t f
Tj=125 ° C
V CC =600V,
I C =150A
V GE= ± 15V,
RG=5.6Ω
-
40
-
ns
1) values also influenced by parasitic L- and C- in measurement and package.


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