SPP80N06S-08 datasheet(3/8 Pages) INFINEON

Part #	SPP80N06S-08

Description	SIPMOS짰 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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3 / 8 page

SPB80N06S-08

SPI80N06S-08, SPP80N06S-08

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

2)

Input capacitance

C iss

-

3660

-

pF

Output capacitance

C oss

-

1075

-

Reverse transfer capacitance

Crss

-

540

-

Turn-on delay time

t d(on)

-22

-

ns

Rise time

t r

-53

-

Turn-off delay time

t d(off)

-54

-

Fall time

t f

-32

-

Gate Charge Characteristics

2)

Gate to source charge

Q gs

-19

-

nC

Gate to drain charge

Q gd

-62

-

Gate charge total

Q g

-

125

187

Gate plateau voltage

V plateau

-

5.4

-

V

Reverse Diode

2)

Diode continous forward current

I S

-

80

A

Diode pulse current

I S,pulse

-

320

Diode forward voltage

V SD

V GS=0 V, I F=80 A,

T j=25 °C

-

0.9

1.3

V

Reverse recovery time

t rr

V R=27.5 V, I F=I S,

di F/dt =100 A/µs

-

105

ns

Reverse recovery charge

Q rr

-30

-

nC

Values

V GS=0 V, V DS=25 V,

f =1 MHz

VDD=30 V, ID=80 A,

VGS=10 V, RG=2.4 Ω

V DD=44 V, I D=80 A,

V GS=0 to 10 V

1) Current is limited by bondwire; with an R

thJC=0.5 K/W the chip is able to carry 132A at 25°C. For detailed

information see Application Note APPS071E at www.infineon.com/optimos

2) Defined by design not subjected to production test.

3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

T C=25 °C

Rev. 1.0

page 3

2004-11-30

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SPP80N06S-08 Datasheet(PDF) 3 Page - Infineon Technologies AG

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