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SPS01N60C3 Datasheet(PDF) 6 Page - Infineon Technologies AG |
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SPS01N60C3 Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 10 page 2005- 10-24 Rev. 2.0 Page 6 SP S01N60C3 5 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 0.5 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0 4 8 12 16 20 24 28 Ω 34 typ 98% 6 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 4 8 12 VGS 20 V 0 0.5 1 1.5 A 2.5 7 Typ. gate charge VGS = f (QGate) parameter: ID = 0.8 A pulsed 0 1 2 3 4 nC 5.5 QGate 0 2 4 6 8 10 12 V 16 0.2 V DS max 0.8 V DS max 8 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 µs 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD -2 10 -1 10 0 10 1 10 A T j = 25 °C typ T j = 25 °C (98%) T j = 150 °C typ T j = 150 °C (98%) |
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