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IC61SF12832-10TQI Datasheet(PDF) 7 Page - Integrated Circuit Solution Inc

Part # IC61SF12832-10TQI
Description  128K x 32 Flow Through SyncBurst SRAM
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Manufacturer  ICSI [Integrated Circuit Solution Inc]
Direct Link  http://www.icsi.com.tw
Logo ICSI - Integrated Circuit Solution Inc

IC61SF12832-10TQI Datasheet(HTML) 7 Page - Integrated Circuit Solution Inc

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IC61SF12832
IC61SF12836
Integrated Circuit Solution Inc.
7
SSR018-0A
09/17/2001
INTERLEAVED BURST ADDRESS TABLE (MODE = VCCQ or No Connect)
External Address
1st Burst Address
2nd Burst Address
3rd Burst Address
A1 A0
A1 A0
A1 A0
A1 A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
LINEAR BURST ADDRESS TABLE (MODE = GND)
0,0
1,0
0,1
A1’, A0’ = 1,1
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
TBIAS
Temperature Under Bias
-40 to +85
oC
TSTG
Storage Temperature
-55 to +150
oC
PD
Power Dissipation
1.6
W
IOUT
Output Current (per I/O)
100
mA
VIN, VOUT Voltage Relative to GND for I/O Pins
-0.5 to VCCQ + 0.3
V
VIN
Voltage Relative to GND for
-0.5 to VCC + 0.5
V
for Address and Control Inputs
VCC
Voltage on Vcc Supply Relatiive to GND
-0.5 to 4.6
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating condi-
tions for extended periods may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static
voltages or electric fields; however, precautions may be taken to avoid application of any
voltage higher than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.


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