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IS41LV44002 Datasheet(PDF) 3 Page - Integrated Silicon Solution, Inc

Part # IS41LV44002
Description  4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS41LV44002 Datasheet(HTML) 3 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — 1-800-379-4774
3
Rev. D
06/24/01
IS41C4400X
IS41LV4400X SERIES
ISSI®
Functional Description
The IS41C4400x and IS41LV4400x are CMOS
DRAMs optimized for high-speed bandwidth, low
power applications. During READ or WRITE cycles, each
bit is uniquely addressed through the 11 or 12 address
bits. These are entered 11 bits (A0-A10) at a time for the
2K refresh device or 12 bits (A0-A11) at a time for the 4K
refresh device. The row address is latched by the Row
Address Strobe (
RAS). The column address is latched by
the Column Address Strobe (
CAS). RAS is used to latch
the first nine bits and
CAS is used the latter ten bits.
Memory Cycle
A memory cycle is initiated by bring
RAS LOW and it is
terminated by returning both
RAS and CAS HIGH. To
ensures proper device operation and data integrity any
memory cycle, once initiated, must not be ended or
aborted before the minimum tRAS time has expired. A new
cycle must not be initiated until the minimum precharge
time tRP, tCP has elapsed.
Read Cycle
A read cycle is initiated by the falling edge of
CAS or OE,
whichever occurs last, while holding
WE HIGH. The
column address must be held for a minimum time
specified by tAR. Data Out becomes valid only when tRAC,
tAA, tCAC and tOEA are all satisfied. As a result, the access
time is dependent on the timing relationships between
these parameters.
Write Cycle
A write cycle is initiated by the falling edge of
CAS and
WE, whichever occurs last. The input data must be valid
at or before the falling edge of
CAS or WE, whichever
occurs last.
Auto Refresh Cycle
To retain data, 2,048 refresh cycles are required in each
32 ms period, or 4,096 refresh cycles are required in
each 64ms period. There are two ways to refresh the
memory:
1. By clocking each of the 2,048 row addresses (A0
through A10) or 4096 row addresses (A0 through
A11) with RAS at least once every 32 ms or 64ms
respectively. Any read, write, read-modify-write or
RAS-only cycle refreshes the addressed row.
2. Using a
CAS-before-RAS refresh cycle. CAS-before-RAS
refresh is activated by the falling edge of
RAS, while
holding
CAS LOW. In CAS-before-RAS refresh cycle,
an internal 9-bit counter provides the row addresses
and the external address inputs are ignored.
CAS-before-RAS is a refresh-only mode and no data
access or device selection is allowed. Thus, the output
remains in the High-Z state during the cycle.
Power-On
After application of the VCC supply, an initial pause of 200
µs is required followed by a minimum of eight initialization
cycles (any combination of cycles containing a
RAS
signal).
During power-on, it is recommended that
RAS track with
VCC or be held at a valid VIH to avoid current surges.


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