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IS42VS16400C1-12TLI Datasheet(PDF) 4 Page - Integrated Silicon Solution, Inc |
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IS42VS16400C1-12TLI Datasheet(HTML) 4 Page - Integrated Silicon Solution, Inc |
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4 / 56 page  IS42VS16400C1 ISSI® 4 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 10/06/05 FUNCTION (In Detail) A0-A11 are address inputs sampled during the ACTIVE (row-address A0-A11) and READ/WRITE command (A0-A7 with A10 defining auto PRECHARGE). A10 is sampled during a PRECHARGE command to determine if all banks are to be PRECHARGED (A10 HIGH) or bank selected by BA0, BA1 (LOW). The address inputs also provide the op-code during a LOAD MODE REGISTER command. Bank Select Address (BA0 and BA1) defines which bank the ACTIVE, READ, WRITE or PRECHARGE command is being applied. CAS, in conjunction with the RAS and WE, forms the device command. See the “Command Truth Table” for details on device commands. The CKE input determines whether the CLK input is enabled. The next rising edge of the CLK signal will be valid when is CKE HIGH and invalid when LOW. When CKE is LOW, the device will be in either power-down mode, CLOCK SUSPEND mode, or SELF-REFRESH mode. CKE is an asynchronous input. CLK is the master clock input for this device. Except for CKE, all inputs to this device are acquired in synchroni- zation with the rising edge of this pin. The CS input determines whether command input is enabled within the device. Command input is enabled when CS is LOW, and disabled with CS is HIGH. The device remains in the previous state when CS is HIGH. DQ0 to DQ15 are DQ pins. DQ through these pins can be controlled in byte units using the LDQM and UDQM pins. LDQM and UDQM control the lower and upper bytes of the DQ buffers. In read mode, LDQM and UDQM control the output buffer. When LDQM or UDQM is LOW, the corre- sponding buffer byte is enabled, and when HIGH, dis- abled. The outputs go to the HIGH Impedance State when LDQM/UDQM is HIGH. This function corresponds to OE in conventional DRAMs. In write mode, LDQM and UDQM control the input buffer. When LDQM or UDQM is LOW, the corresponding buffer byte is enabled, and data can be written to the device. When LDQM or UDQM is HIGH, input data is masked and cannot be written to the device. RAS, in conjunction with CAS and WE , forms the device command. See the “Command Truth Table” item for details on device commands. WE , in conjunction with RAS and CAS , forms the device command. See the “Command Truth Table” item for details on device commands. VDDQ is the output buffer power supply. VDD is the device internal power supply. GNDQ is the output buffer ground. GND is the device internal ground. READ The READ command selects the bank from BA0, BA1 inputs and starts a burst read access to an active row. Inputs A0-A7 provides the starting column location. When A10 is HIGH, this command functions as an AUTO PRECHARGE command. When the auto precharge is selected, the row being accessed will be precharged at the end of the READ burst. The row will remain open for subsequent accesses when AUTO PRECHARGE is not selected. DQ’s read data is subject to the logic level on the DQM inputs two clocks earlier. When a given DQM signal was registered HIGH, the corresponding DQ’s will be High-Z two clocks later. DQ’s will provide valid data when the DQM signal was registered LOW. WRITE A burst write access to an active row is initiated with the WRITE command. BA0, BA1 inputs selects the bank, and the starting column location is provided by inputs A0-A7. Whether or not AUTO-PRECHARGE is used is deter- mined by A10. The row being accessed will be precharged at the end of the WRITE burst, if AUTO PRECHARGE is selected. If AUTO PRECHARGE is not selected, the row will remain open for subsequent accesses. A memory array is written with corresponding input data on DQ’s and DQM input logic level appearing at the same time. Data will be written to memory when DQM signal is LOW. When DQM is HIGH, the corresponding data inputs will be ignored, and a WRITE will not be executed to that byte/column location. PRECHARGE The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks. BA0, BA1 can be used to select which bank is precharged or they are treated as “Don’t Care”. A10 determined whether one or all banks are precharged. After executing this command, the next command for the selected banks(s) is executed after passage of the period t RP, which is the period required for bank precharging. Once a bank has been precharged, it is in the idle state and must be activated prior to any READ or WRITE commands being issued to that bank. AUTO PRECHARGE The AUTO PRECHARGE function ensures that the precharge is initiated at the earliest valid stage within a burst. This function allows for individual-bank precharge without requiring an explicit command. A10 to enables the AUTO PRECHARGE function in conjunction with a spe- cific READ or WRITE command. For each individual READ or WRITE command, auto precharge is either |
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