IS61C3216AL-12T datasheet(4/16 Pages) ISSI

Part #	IS61C3216AL-12T

Description	32K x 16 HIGH-SPEED CMOS STATIC RAM

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. A

09/26/05

ISSI®

IS61C3216AL

CAPACITANCE(1,2)

Symbol

Parameter

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 0V

5

pF

COUT

Output Capacitance

VOUT = 0V

7

pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 5.0V.

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter

Test Conditions

Min.

Max.

Unit

VOH

Output HIGH Voltage

VDD = Min., IOH = –4.0 mA

2.4

—

V

VOL

Output LOW Voltage

VDD = Min., IOL = 8.0 mA

—

0.4

V

VIH

Input HIGH Voltage

2.2

VDD + 0.5

V

VIL

Input LOW Voltage(1)

–0.3

0.8

V

ILI

Input Leakage

GND

≤ VIN ≤ VDD

Com.

–1

1

µA

Ind.

–2

2

ILO

Output Leakage

GND

≤ VOUT ≤ VDD

Com.

–1

1

µA

Outputs Disabled

Ind.

–2

2

Note:

1. VIL = –3.0V for pulse width less than 10 ns.

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IS61C3216AL-12T Datasheet(PDF) 4 Page - Integrated Silicon Solution, Inc

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