Electronic Components Datasheet Search |
|
IS61C3216AL-12T Datasheet(PDF) 4 Page - Integrated Silicon Solution, Inc |
|
IS61C3216AL-12T Datasheet(HTML) 4 Page - Integrated Silicon Solution, Inc |
4 / 16 page 4 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 09/26/05 ISSI® IS61C3216AL CAPACITANCE(1,2) Symbol Parameter Conditions Max. Unit CIN Input Capacitance VIN = 0V 5 pF COUT Output Capacitance VOUT = 0V 7 pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 5.0V. DC ELECTRICAL CHARACTERISTICS (Over Operating Range) Symbol Parameter Test Conditions Min. Max. Unit VOH Output HIGH Voltage VDD = Min., IOH = –4.0 mA 2.4 — V VOL Output LOW Voltage VDD = Min., IOL = 8.0 mA — 0.4 V VIH Input HIGH Voltage 2.2 VDD + 0.5 V VIL Input LOW Voltage(1) –0.3 0.8 V ILI Input Leakage GND ≤ VIN ≤ VDD Com. –1 1 µA Ind. –2 2 ILO Output Leakage GND ≤ VOUT ≤ VDD Com. –1 1 µA Outputs Disabled Ind. –2 2 Note: 1. VIL = –3.0V for pulse width less than 10 ns. |
Similar Part No. - IS61C3216AL-12T |
|
Similar Description - IS61C3216AL-12T |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |