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IS61DDB42M18 Datasheet(PDF) 10 Page - Integrated Silicon Solution, Inc |
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IS61DDB42M18 Datasheet(HTML) 10 Page - Integrated Silicon Solution, Inc |
10 / 26 page 10 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 07/09/04 ISSI® 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs X18 Write Truth Table Use the following table with the Timing Reference Diagram for Truth Table on page 8. Operation K (tW+1) K (tW+1.5) K (tW+2) K (tW+2.5) BW0 BW1 DB DB+1 DB+2 DB+3 Write Byte 0 L →HL H D0-8 (tW+1) Write Byte 1 L →HH L D9-17 (tW+1) Abort Write L →H HH Don’t care Write Byte 0 L →HL H D0-8 (tW+1.5) Write Byte 1 L →HH L D9-17 (tW+1.5) Write All Bytes L →HL L D0-17 (tW+1.5) Abort Write L →H HH Don’t care Write Byte 0 L →HL H D0-8 (tW+2) Write Byte 1 L →HH L D9-17 (tW+2) Write All Bytes L →H LL D0-17 (tW+2) Abort Write L →HH H Don’t care Write Byte 0 L →HL H D0-8 (tW+2.5) Write Byte 1 L →H HL D9-17 (tW+2.5) Write All Bytes L →H LL D0-17 (tW+2.5) Abort Write L →HH H Don’t care Notes; 1. For all cases, R/W needs to be active low during the rising edge of K occurring at time tW 2. For timing definitions refer to the AC Characteristics on page 16. Signals must have AC specifications with respect to switching clocks K and K. |
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