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IS61LV256AL-10TL Datasheet(PDF) 8 Page - Integrated Silicon Solution, Inc |
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IS61LV256AL-10TL Datasheet(HTML) 8 Page - Integrated Silicon Solution, Inc |
8 / 13 page IS61LV256AL ISSI® 8 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. A 03/17/06 DATA UNDEFINED LOW t WC VALID ADDRESS t PWE1 t AW t HA HIGH-Z t HD t SA t HZWE ADDRESS CE WE DOUT DIN OE DATAIN VALID t LZWE t SD CE_WR2.eps WRITE CYCLE NO. 2 (WE Controlled, OE is HIGH During Write Cycle) (1,2) WRITE CYCLE NO. 3 (WE Controlled, OE is LOW During Write Cycle) (1) DATA UNDEFINED t WC VALID ADDRESS LOW LOW t PWE2 t AW t HA HIGH-Z t HD t SA t HZWE ADDRESS CE WE DOUT DIN OE DATAIN VALID t LZWE t SD CE_WR3.eps Notes: 1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 2. I/O will assume the High-Z state if OE > VIH. |
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