IS64WV102416BLL-10MA3 datasheet(8/21 Pages) ISSI

Part #	IS64WV102416BLL-10MA3

Description	1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

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8

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. A

02/13/06

ISSI®

IS61WV102416ALL

IS61WV102416BLL

IS64WV102416BLL

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

-8

-10

-20

Symbol Parameter

Test Conditions

Min.

Max.

Min.

Max.

Min.

Max.

Unit

ICC

VDD Dynamic Operating

VDD = Max.,

Com.

—

120

—

95

—

90

mA

Supply Current

IOUT = 0 mA, f = fMAX

Ind.

—

125

—

100

—

100

VIN = 0.4V or VDD –0.3V

Auto.

—

140

—

140

typ.(2)

60

ICC1

Operating

VDD = Max.,

Com.

—

35

—

30

—

30

mA

Supply Current

IOUT = 0 mA, f = 0

Ind.

—

35

—

40

—

40

VIN = 0.4V or VDD –0.3V

Auto.

—

70

—

70

ISB1

TTL Standby Current

VDD = Max.,

Com.

—

30

—

30

—

30

mA

(TTL Inputs)

VIN = VIH or VIL

Ind.

—

35

—

35

—

35

CE

≥ VIH, f = 0

Auto.

—

70

—

70

ISB2

CMOS Standby

VDD = Max.,

Com.

—

20

—

20

—

20

mA

Current (CMOS Inputs)

CE

≥ VDD – 0.2V,

Ind.

—

25

—

25

—

25

VIN

≥ VDD – 0.2V, or

Auto.

—

70

—

70

VIN

≤ 0.2V, f = 0

typ.(2)

4

Note:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

2. Typical values are measured at VDD = 3.0V, TA = 25oC and not 100% tested.

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