IS62WV6416BLL-45T datasheet(4/17 Pages) ISSI

Part #	IS62WV6416BLL-45T

Description	64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. B

06/03/05

IS62WV6416ALL, IS62WV6416BLL

ISSI®

CAPACITANCE(1)

Symbol

Parameter

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 0V

8

pF

COUT

Input/Output Capacitance

VOUT = 0V

10

pF

Note:

1. Tested initially and after any design or process changes that may affect these parameters.

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol

Parameter

Test Conditions

VDD

Min.

Max.

Unit

VOH

Output HIGH Voltage

IOH = -0.1 mA

1.7-2.2V

1.4

—

V

IOH = -1 mA

2.5-3.6V

2.2

—

V

VOL

Output LOW Voltage

IOL = 0.1 mA

1.7-2.2V

—

0.2

V

IOL = 2.1 mA

2.5-3.6V

—

0.4

V

VIH

Input HIGH Voltage

1.7-2.2V

1.4

VDD + 0.2

V

2.5-3.6V

2.2

VDD + 0.3

V

VIL(1)

Input LOW Voltage

1.7-2.2V

–0.2

0.4

V

2.5-3.6V

–0.2

0.6

V

ILI

Input Leakage

GND

≤ VIN ≤ VDD

–1

1

µA

ILO

Output Leakage

GND

≤ VOUT ≤ VDD, Outputs Disabled

–1

1

µA

Notes:

1. VIL (min.) = –1.0V for pulse width less than 10 ns.

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IS62WV6416BLL-45T Datasheet(PDF) 4 Page - Integrated Silicon Solution, Inc

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