IS62LV256AL-45ULI datasheet(4/14 Pages) ISSI

Part #	IS62LV256AL-45ULI

Description	32K x 8 LOW VOLTAGE CMOS STATIC RAM

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

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IS65LV256AL

IS62LV256AL

ISSI®

4

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. A

03/17/06

CAPACITANCE(1,2)

Symbol

Parameter

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 0V

6

pF

COUT

Output Capacitance

VOUT = 0V

5

pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V.

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

-20 ns

-45 ns

Symbol Parameter

Test Conditions

Min. Max.

Unit

ICC1

VDD Operating

VDD = Max.,

CE = VIL

Com.

—

4

—

4

mA

Supply Current

IOUT = 0 mA, f = 1 MHz

Ind.

—

5

—

5

Auto.

—

8

ICC2

VDD Dynamic Operating

VDD = Max.,

CE = VIL

Com.

—

20

—

10

mA

Supply Current

IOUT = 0 mA, f = fMAX

Ind.

—

25

—

12

Auto.

—

20

typ.(2)

15

7

ISB1

TTL Standby Current

VDD = Max.,

Com.

—

1.5

—

1.5

mA

(TTL Inputs)

VIN = VIH or VIL

Ind.

—

1.8

—

1.8

CE

≥ VIH, f = 0

Auto.

—

2

ISB2

CMOS Standby

VDD = Max.,

Com.

—

15

—

15

µA

Current (CMOS Inputs)

CE

≤ VDD – 0.2V,

Ind.

—

20

—

20

VIN > VDD – 0.2V, or

Auto.

—

50

VIN

≤ 0.2V, f = 0

typ.(2)

2

Note:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

2. Typical values are measured at VDD = 3.3V, TA = 25oC and not 100% tested.

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