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A1015LT1 Datasheet(PDF) 1 Page - Weitron Technology

Part # A1015LT1
Description  TRANSISTOR (PNP)
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Manufacturer  WEITRON [Weitron Technology]
Direct Link  http://www.weitron.com.tw
Logo WEITRON - Weitron Technology

A1015LT1 Datasheet(HTML) 1 Page - Weitron Technology

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A1015LT1
TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM:
0.2
W (Tamb=25 )
Collector current
ICM:
-0.15
A
Collector-base voltage
V(BR)CBO:
-50
V
Operating and storage junction temperature range
TJ, Tstg: -55
to +150
ELECTRICAL CHARACTERISTICS (Tamb=25
unless
otherwise
specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= -100
µA, IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic= -0.1mA, IB =0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -10µA, IC=0
5
V
Collector cut-off current
ICBO
VCB=-50V , IE=0
-0.1
µA
Collector cut-off current
ICEO
VCE= -50V , IB=0
-0.1
µA
Emitter cut-off current
IEBO
VEB=- 5V , IC=0
-0.1
µA
DC current gain
HFE(1)
VCE=-6V, IC= -2mA
130
400
Collector-emitter saturation voltage
VCE(sat)
IC=-100 mA, IB= -10mA
-0.3
V
Base-emitter saturation voltage
VBE(sat)
IC=-100 mA, IB= -10mA
-1.1
V
Transition frequency
fT
VCE=-10V, IC= -1mA
f=30MHz
80
MHz
CLASSIFICATION
OF
HFE(1)
Rank
L
H
Range
130-200
200- 40 0
MARKING
BA
Unit: mm
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
A1015LT1
WEITRON
http://www.weitron.com.tw
-
-
* “G” Lead(Pb)-Free


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