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TISP6NTP2A Datasheet(PDF) 2 Page - Bourns Electronic Solutions |
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TISP6NTP2A Datasheet(HTML) 2 Page - Bourns Electronic Solutions |
2 / 9 page Specifications are subject to change without notice. 221 JUNE 1998 - REVISED OCTOBER 2000 Description (continued) These systems often have the need to source two POTS (Plain Old Telephone Service) lines, one for a telephone and the other for a facsimile machine. In a single surface mount package, the TISP6NTP2A protects the two POTS line SLICs (Subscriber Line Interface Circuits) against overvoltages caused by lightning, a.c. power contact and induction. The TISP6NTP2A has an array of four buffered P-gate forward conducting thyristors with twin commoned gates and a common anode connection. Each thyristor cathode has a separate terminal connection. An antiparallel anode-cathode diode is connected across each thyristor. The buffer transistors reduce the gate supply current. In use, the cathodes of an TISP6NTP2A thyristor are connected to the four conductors of two POTS lines (see applications information). Each gate is connected to the appropriate negative voltage battery feed of the SLIC driving that line pair. By having separate gates, each SLIC can be protected at a voltage level related to the negative supply voltage of that individual SLIC. The anode of the TISP6NTP2A is connected to the SLIC common. Positive overvoltages are clipped to common by forward conduction of the TISP6NTP2A antiparallel diode. Negative overvoltages are initially clipped close to the SLIC negative supply by emitter follower action of the TISP6NTP2A buffer transistor. If sufficient clipping current flows, the TISP6NTP2A thyristor will regenerate and switch into a low voltage on-state condition. As the overvoltage subsides, the high holding current of the TISP6NTP2A prevents d.c. latchup. Rating Symbol Value Unit Repetitive peak off-state voltage, IG =0, -40 °C ≤ TJ ≤ 85 °CVDRM -100 V Repetitive peak gate-cathode voltage, VKA =0, -40 °C ≤ TJ ≤ 85 °CVGKRM -90 V Non-repetitive peak on-state pulse current, -40 °C ≤ TJ ≤ 85 °C, (see Notes 1 and 2) ITSP A 10/1000 µs (Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4) 20 0.2/310 µs (I3124, open-circuit voltage wave shape 0.5/700 µs) 5/310 µs (ITU-T K.20 & K.21, open-circuit voltage wave shape 10/700 µs) 8/20 µs (IEC 61000-4-5:1995, open-circuit voltage wave shape 1.2/50 µs) 25 25 75 2/10 µs (Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4) 85 Non-repetitive peak on-state current, 50/60 Hz, -40 °C ≤ TJ ≤ 85 °C, (see Notes 1 and 2) ITSM A 100 ms 7 1s 5s 300 s 900 s 2.7 1.5 0.45 0.43 Non-repetitive peak gate current, 1/2 µs pulse, cathodes commoned (see Note 1) IGSM 25 A Operating free-air temperature range TA -40 to +85 °C Junction temperature TJ -40 to +150 °C Storage temperature range Tstg -65 to +150 °C NOTES: 1. Initially, the protector must be in thermal equilibrium with -40 °C ≤ TJ ≤ 85 °C. The surge may be repeated after the device returns to its initial conditions. 2. These non-repetitive rated currents are peak values for either polarity. The rated current values may be applied to any cathode- anode terminal pair. Additionally, all cathode-anode terminal pairs may have their rated current values applied simultaneously (in this case the anode terminal current will be four times the rated current value of an individual terminal pair). Above 85 °C, derate linearly to zero at 150 °C lead temperature. Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) TISP6NTP2A Programmable Protector |
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