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S8550 Datasheet(PDF) 1 Page - Weitron Technology |
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S8550 Datasheet(HTML) 1 Page - Weitron Technology |
1 / 4 page ABSOLUTE MAXIMUM RATINGS Collector-E mitter Voltage Collector-B as e Voltage E mitter-B as e VOltage Collector Current Symbol VCE O VCB O VEB O IC Value Unit Vdc Vdc Vdc mAdc Rating S8550 Ts tg P D C C WEITRON http://www.weitron.com.tw PNP General Purpose Transistors (Ta=25 C) -40 -5.0 -500 -25 Total Device Dis s ipation T =25 C 0.625 W Junction Temperature T j 150 S torage, Temperature -55 to +150 A TO-92 1 2 3 1. E MIT T E R 2. B ASE 3. COL L E CTOR Characteristics Symbol Min Max Unit ELECTRICAL CHARACTERISTICS Collector-E mitter B reakdown Voltage (IC= -0.1 mAdc, IB =0) Collector-B as e B reakdown Voltage (IC= -100 µAdc, IE=0) E mitter-B as e B reakdown Voltage (IE= -100 µAdc, IC=0) Collector Cutoff Current (VCE = -20 Vdc, I =0) Collector Cutoff Current (VCB = -40 Vdc, IE=0) E mitter Cutoff Current (VEB = -3.0V c, I =0) V(B R )CEO V(B R )CB O V(B R )EB O ICE0 ICB O IEB O -5.0 - - - - - - -0.1 Vdc Vdc Vdc uAdc uAdc uAdc -25 -40 -0.2 -0.1 d B C Lead(Pb)-Free P b |
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