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TBN6301KF Datasheet(PDF) 1 Page - Tachyonics CO,. LTD |
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TBN6301KF Datasheet(HTML) 1 Page - Tachyonics CO,. LTD |
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1 / 6 page  □ Features - High gain bandwidth product f T = 6 GHz @ VCE = 3 V, IC = 10 mA f T = 7.5 GHz @ VCE = 5 V, IC = 20 mA - High power gain |S 21| 2 = 9 dB @ V CE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB @ V CE = 3 V, IC = 10 mA, f = 1 GHz □ Applications - UHF and VHF wide band amplifier Page 1 of 6 http://www.tachyonics.co.kr Dec. 2005. Rev. 1.0 NPN SILICON RF TRANSISTOR Preliminary Specification TBN6301 series □ Absolute Maximum Ratings (T A = 25 ℃) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Operating Junction Temperature Storage Temperature 150 ℃ IC 75 mA mW Unit BVCBO 20 V Parameter Symbol Ptot 150 Ratings ℃ Tstg -65 ~ 150 V BVEBO 3 V BVCEO 8 Tj Caution : Electro Static Discharge sensitive device SOT323 Pin Configuration (TBN6301U) 1. Base 2. Emitter 3. Collector Unit in mm 2.1±0.1 1.25±0.05 1 2 3 0.1 Min. |
Similar Part No. - TBN6301KF |
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Similar Description - TBN6301KF |
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