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W3E32M72S-250SBI Datasheet(PDF) 10 Page - White Electronic Designs Corporation |
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W3E32M72S-250SBI Datasheet(HTML) 10 Page - White Electronic Designs Corporation |
10 / 19 page W3E32M72S-XSBX 10 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs July 2006 Rev. 6 White Electronic Designs Corp. reserves the right to change products or specifications without notice. A simple algorithm for meeting both refresh and DLL requirements is to apply NOPs for tXSNR time, then a DLL Reset and NOPs for 200 additional clock cycles before applying any other command. * Self refresh available in commercial and industrial temperatures only. ABSOLUTE MAXIMUM RATINGS Parameter Unit Voltage on VCC, VCCQ Supply relative to Vss -1 to 3.6 V Voltage on I/O pins relative to Vss -0.5V to VCCQ +0.5V V Operating Temperature TA (Mil) -55 to +125 °C Operating Temperature TA (Ind) -40 to +85 °C Storage Temperature, Plastic -55 to +125 °C Maximum Junction Temperature 125 °C NOTE: Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions greater than those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. CAPACITANCE (NOTE 13) Parameter Symbol Max Unit Input Capacitance: CK/CK# CI1 7 pF Addresses, BA0-1 Input Capacitance CA 24 pF Input Capacitance: All other input-only pins CI2 9pF Input/Output Capacitance: I/Os CIO 9 pF BGA THERMAL RESISTANCE Description Symbol Typical Units Notes Junction to Ambient (No Airflow) Theta JA 20.7 °C/W 1 Junction to Ball Theta JB 18.1 °C/W 1 Junction to Case (Top) Theta JC 7.5 °C/W 1 Note: These typical thermal resistances are for each DRAM die, if using the total power of the MCP, divide the given values by 5. Refer to "PBGA Thermal Resistance Correlation" (Application Note) at www.wedc.com in the application notes section for modeling conditions. |
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