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W3EG2256M72ASSR263AJD3XG Datasheet(PDF) 9 Page - White Electronic Designs Corporation

Part # W3EG2256M72ASSR263AJD3XG
Description  4GB - 2x256Mx72 DDR SDRAM REGISTERED ECC, w/PLL
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Manufacturer  WEDC [White Electronic Designs Corporation]
Direct Link  http://www.whiteedc.com
Logo WEDC - White Electronic Designs Corporation

W3EG2256M72ASSR263AJD3XG Datasheet(HTML) 9 Page - White Electronic Designs Corporation

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W3EG2256M72ASSR-JD3
-AJD3
9
White Electronic Designs
November, 04
Rev. 3
PRELIMINARY
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND
RECOMMENDED AC OPERATING CONDITIONS (continued)
AC Characteristics
262
263/265
202
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Units
Notes
ACTIVE to READ or WRITE delay
tRCD
15
20
20
ns
PRECHARGE command period
tRP
15
20
20
ns
DQS read preamble
tRPRE
0.9
1.1
0.9
1.1
0.9
1.1
tCK
19
DQS read postamble
tRPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
ACTIVE bank a to ACTIVE bank b command
tRRD
15
15
15
ns
DQS write preamble
tWPRE
0.25
0.25
0.25
tCK
DQS write preamble setup time
tWPRES
0
0
0
ns
10,11
DQS write postamble
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
9
Write recovery time
tWR
15
15
15
ns
Internal WRITE to READ command delay
tWTR
111
tCK
Data valid output window
NA
tQH-tDQSQ
tQH-tDQSQ
tQH-tDQSQ
ns
13
REFRESH to REFRESH command interval
tREFC
70.3
70.3
70.3
μs
12
Average periodic refresh interval
tREFI
7.8
7.8
7.8
μs
12
Terminating voltage delay to VCC
tVTD
000
ns
Exit SELF REFRESH to non-READ command
tXSNR
75
75
75
ns
Exit SELF REFRESH to READ command
tXSRD
200
200
200
tCK


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