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WED3EG72M32S263JD3IMG Datasheet(PDF) 7 Page - White Electronic Designs Corporation

Part # WED3EG72M32S263JD3IMG
Description  256MB - 32Mx72 DDR SDRAM UNBUFFERED
Download  12 Pages
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Manufacturer  WEDC [White Electronic Designs Corporation]
Direct Link  http://www.whiteedc.com
Logo WEDC - White Electronic Designs Corporation

WED3EG72M32S263JD3IMG Datasheet(HTML) 7 Page - White Electronic Designs Corporation

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White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WED3EG7232S-JD3
June 2006
Rev. 6
PRELIMINARY
DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND
RECOMMENDED AC OPERATING CONDITIONS
DDR400: VCC = VCCQ = +2.6V ± 0.1V; DDR333, 266, 200: VCC = VCCQ = +2.5V ± 0.2V
AC Characteristics
403
335
262/265
202
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Units
Notes
Access window of DQs from CK, CK#
tAC
-0.70
+0.70
-0.70
+0.70
-0.75
+0.75
-0.75
+0.75
ns
CK high-level width
tCH
0.45
0.55
0.45
0.55
0.45
0.55
0.45
0.55
tCK
16
CK low-level width
tCL
0.45
0.55
0.45
0.55
0.45
0.55
0.45
0.55
tCK
16
Clock cycle time
CL=3
tCK (3)
5
7.5
ns
22
CL=2.5 tCK (2.5)
6
13
6
13
7.5
13
7.5
13
ns
22
CL=2
tCK (2)
7.5
13
7.5
13
7.5
13
10
13
ns
22
DQ and DM input hold time relative to DQS
tDH
0.40
0.45
0.5
0.5
ns
14,17
DQ and DM input setup time relative to DQS
tDS
0.40
0.45
0.5
0.5
ns
14,17
DQ and DM input pulse width (for each input)
tDIPW
1.75
1.75
1.75
1.75
ns
17
Access window of DQS from CK, CK#
tDQSCK
-0.60
+0.60
-0.60
+0.60
-0.75
+0.75
-0.75
+0.75
ns
DQS input high pulse width
tDQSH
0.35
0.35
0.35
0.35
tCK
DQS input low pulse width
tDQSL
0.35
0.35
0.35
0.35
tCK
DQS-DQ skew, DQS to last DQ valid, per group,
per access
tDQSQ
0.40
0.45
0.5
0.5
ns
13,14
Write command to first DQS latching transition
tDQSS
0.72
1.28
0.75
1.25
0.75
1.25
0.75
1.25
tCK
DQS falling edge to CK rising - setup time
tDSS
0.2
0.2
0.2
0.2
tCK
DQS falling edge from CK rising - hold time
tDSH
0.2
0.2
0.2
0.2
tCK
Half clock period
tHP
tCH, tCL
tCH, tCL
tCH, tCL
tCH, tCL
ns
18
Data-out high-impedance window from CK, CK#
tHZ
+0.70
+0.70
+0.75
+0.75
ns
8,19
Data-out low-impedance window from CK, CK#
tLZ
-0.70
-0.70
-0.75
-0.75
ns
8,20
Address and control input hold time (fast slew rate)
tIHf
0.60
0.75
0.90
0.90
ns
6
Address and control input set-up time (fast slew rate)
tISf
0.60
0.75
0.90
0.90
ns
6
Address and control input hold time (slow slew rate)
tIHs
0.60
0.80
1
1
ns
6
Address and control input setup time (slow slew rate)
tISs
0.60
0.80
1
1
ns
6
Address and control input pulse width (for each input)
tIPW
2.2
2.2
2.2
2.2
ns
LOAD MODE REGISTER command cycle time
tMRD
10
12
15
15
ns
DQ-DQS hold, DQS to first DQ to go non-valid, per
access
tQH
tHP-tQHS
tHP-tQHS
tHP-tQHS
tHP-tQHS
ns
13,14
Data hold skew factor
tQHS
0.50
0.55
0.75
0.75
ns
ACTIVE to PRECHARGE command
tRAS
40
70,000
42
70,000
40
120,000
45
120,000
ns
15
ACTIVE to READ with Auto precharge command
tRAP
15
15
15
20
ns
ACTIVE to ACTIVE/AUTO REFRESH command period
tRC
55
60
60
65
ns
AUTO REFRESH command period
tRFC
70
72
75
75
ns
21


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