WSE128K16-XXX

10

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

White Electronic Designs

PRELIMINARY

White Electronic Designs Corp. reserves the right to change products or specifications without notice.

March 2005

Rev. 3

EEPROM PAGE WRITE OPERATION

The WSE128K16-XXX has a page write operation

that allows one to 128 bytes of data to be written into

the device and consecutively loads during the internal

programming period. Successive bytes may be loaded

in the same manner after the first data byte has been

loaded. An internal timer begins a time out operation at

each write cycle. If another write cycle is completed within

150µs or less, a new time out period begins. Each write

cycle restarts the delay period. The write cycles can be

continued as long as the interval is less than the time out

period.

The usual procedure is to increment the least significant

address lines from A0 through A6 at each write cycle. In

this manner a page of up to 128 bytes can be loaded in

to the EEPROM in a burst mode before beginning the

relatively long interval programming cycle.

FIGURE 11 – EEPROM PAGE MODE WRITE WAVEFORMS

EEPROM PAGE WRITE CHARACTERISTICS

Page Mode Write Characteristics

Parameter

Symbol

Min

Max

Unit

Write Cycle Time, TYP = 6ms

10

ms

Address Set-up Time

0ns

Address Hold Time (1)

100

ns

Data Set-up Time

100

ns

Data Hold Time

10

ns

Write Pulse Width

150

ns

Byte Load Cycle Time

150

µs

Write Pulse Width High

50

ns

NOTE:

1. Page address must remain valid for duration of write cycle.

BYTE 0

BYTE 1

BYTE 2

BYTE 3

VALID

DATA

VALID

ADDRESS

BYTE 127

OE#

ADDRESS

EEPROM

DATA

After the 150µs time out is completed, the EEPROM

begins an internal write cycle. During this cycle the entire

page of bytes will be written at the same time. The internal

programming cycle is the same regardless of the number

of bytes accessed.