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V6301LSP5B Datasheet(PDF) 2 Page - EM Microelectronic - MARIN SA |
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V6301LSP5B Datasheet(HTML) 2 Page - EM Microelectronic - MARIN SA |
2 / 6 page R V6300 V6301 Copyright © 2006, EM Microelectronic-Marin SA 2 www.emmicroelectronic.com Absolute Maximum Ratings Parameter Symbol Conditions Voltage at VDD to VSS VDD -0.3V to +10V Minimum voltage at RES or RES Vmin VSS – 0.3V Maximum voltage at RES or RES Vmax VDD + 0.3V Storage Temperature Range TSTO -65°C to +150°C Table 1 Stresses above these listed maximum ratings may cause permanent damages to the device. Exposure beyond specified operating conditions may affect device reliability or cause malfunction. Handling Procedures This device has built-in protection against high static voltages or electric fields; however, it is advised that normal precautions be taken as for any other CMOS component. Unless otherwise specified, proper operation can only occur when all terminal voltages are kept within the voltage range. Operating Conditions Parameter Symbol Min Max Unit Operating Temperature 1) TA -40 +125 °C Positive Supply Voltage VDD 1 8 V Table 2 1)The maximum operating temperature is confirmed by sampling at initial device qualification. Electrical Characteristics TA = -40 to +85°C, unless otherwise specified Parameter Symbol Test Conditions Min. Min @ 25°C Typ. Max. @ 25°C Max. Unit Supply current 1) IDD VDD = 2V 3) 1.5 2.1 3.1 µA IDD VDD = 5V 3.0 3.9 5.7 µA IDD VDD = 8V 5.2 6.8 10.0 µA Threshold voltage VTH Version: A,G,M 1.77 1.84 1.95 2.04 2.17 V VTH Version: B,H,N 2.09 2.18 2.32 2.41 2.55 V VTH Version: C,I,O 2.48 2.59 2.73 2.86 3.03 V VTH Version: D,J,P 3.11 3.23 3.42 3.59 3.80 V VTH Version: E,K,Q 3.55 3.70 3.88 4.08 4.32 V VTH Version: F,L,R 4.05 4.22 4.42 4.67 4.95 V Threshold hysteresis VHYS 25 mV RES Output Low Level VOL VDD = 5V, IOL = 8mA 175 400 mV VOL VDD = 3V, IOL = 4mA 140 300 mV VOL VDD = 1V, IOL = 50µA 20 90 mV RES Output High Level VOH VDD = 5V, IOH = -8mA 4.3 4.5 V VOH VDD = 3V, IOH = -4mA 2.3 2.6 V VOH VDD = 1V, IOH = -100µA 850 950 mV Output leakage current 2) ILEAK VDD = 8V 0.05 1 µA Table 3 1) RES or RES open 2) Only for Open drain versions 3) Versions A, G and M are tested at VDD = 1.8V Timing Characteristics VDD = 5.0V, TA = -40 to +85°C, unless otherwise specified Parameter Symbol Test Conditions Min. Typ. Max. Units Power on reset time: V6300 V6301 tPOR V6300 V6301 25 140 50 290 75 560 ms ms Sensitivity 4) tSEN for VDD = 5V to 3V in 5µs 20 0.8 tR µs Reaction time 4) tR for VDD = 5V to 3V in 5µs 22 75 150 µs Table 4 4) Tested on versions with VTH higher than 3V |
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